RQ3E120AT
P沟道-30V -39A 功率MOSFET
主要规格
特性：
Package Code
HSMT8
Applications
Switching
Number of terminal
8
Polarity
P
Drain-Source Voltage VDSS[V]
-30
Drain Current ID[A]
-39
RDS(on)[Ω] VGS=4.5V(Typ)
0.0087
RDS(on)[Ω] VGS=10V(Typ)
0.0061
RDS(on)[Ω] VGS=Drive (Typ)
0.0087
Total gate charge Qg[nC]
33
Power Dissipation (PD)[W]
20
Drive Voltage[V]
-4.5
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
特点：
· 低导通电阻。· 高功率小型模压封装 (HSMT8)
· 无铅电镀；符合RoHS指令
· 不含卤素
