SCT4013DRHR
750V, 105A, 4引脚THD,沟槽结构,车载用碳化硅(SiC) MOSFET主要规格
特性:
Drain-source Voltage[V]
750
Drain-source On-state Resistance(Typ.)[mΩ]
13
Generation
4th Gen (Trench)
Drain Current[A]
105
Total Power Dissipation[W]
312
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
23.45x16.0 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
特点:
- 符合AEC-Q101标准
- 低导通电阻
- 更快的开关速度
- 更快的反向恢复
- 更易于并联
- 驱动更简单
- 无铅引线电镀;符合RoHS指令
