SCT4036KW7
1200V, 40A, 7引脚SMD, 沟槽结构, SiC MOSFET主要规格
特性:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
36
Generation
4th Gen (Trench)
Drain Current[A]
40
Total Power Dissipation[W]
150
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.4x10.2 (t=4.7)
特点:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
参考设计 / 应用评估套件
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- Evaluation Board - HB2637L-EVK-301
The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.
| Quick Start Guide | User's Guide |
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