SCT4045DEHR
750V, 34A, 3引脚THD, 沟槽结构 车载SiC-MOSFET主要规格
特性:
Drain-source Voltage[V]
750
Drain-source On-state Resistance(Typ.)[mΩ]
45
Generation
4th Gen (Trench)
Drain Current[A]
34
Total Power Dissipation[W]
115
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
特点:
- Qualified to AEC-Q101
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
